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IRFBF30S, SiHFBF30S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient (PCB Mount) a
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJA
R thJC
TYP.
-
-
-
MAX.
62
40
1.0
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 900 V, V GS = 0 V
V DS = 720 V, V GS = 0 V, T J = 125 °C
900
-
2.0
-
-
-
-
1.1
-
-
-
-
-
-
4.0
± 100
100
500
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 2.2 A b
-
-
3.7
?
Forward Transconductance
g fs
V DS = 100 V, I D = 2.2
A b
2.3
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
1200
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
320
200
-
-
-
78
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 3.6 A, V DS = 360 V,
see fig. 6 and 13 b
-
-
10
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
14
42
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 450 V, I D = 3.6 A,
R g = 12 ? , R D = 120 ? , see fig. 10 b
-
-
-
25
90
30
-
-
-
ns
Internal Drain Inductance
L D
Between lead,
6 mm (0.25") from
D
-
4.5
-
package and center of
G
nH
Internal Source Inductance
L S
die contact
S
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
3.6
14
A
Body Diode Voltage
V SD
T J = 25 °C, I S = 3.6 A, V GS = 0
V b
-
-
1.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t rr
Q rr
T J = 25 °C, I F = 3.6 A, dI/dt = 100 A/μs b
-
-
430
1.4
650
2.1
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
www.vishay.com
2
Document Number: 91389
S11-1055-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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